Principal Technology Development Engineer

This role develops and improves the front‑end semiconductor process steps used to build advanced CMOS, BCD, and power devices. You’ll design FEOL process flows, run TCAD simulations, build and analyze experiments, and work with cross‑functional teams to optimize modules for manufacturability, electrical performance, and reliability. You’ll support early test‑chip builds, debug issues, define layout rules, and help plan mask sets.

It’s a hands‑on, technical process‑integration role focused on enabling new technologies from concept through early silicon.

Requirements

• 5+ years of relevant experience.
• Graduate degree (MS or PhD) in Electrical Engineering, Physics, Materials Science, or a related field
• Strong understanding of all FEOL process modules (silicon, epitaxy, diffusion, etch, lithography, thin films).
• Experience in process integration for CMOS, BCDMOS, or discrete power devices.
• Solid foundation in semiconductor device physics.
• Ability to design process flows to meet manufacturability and electrical performance targets.
• Experience correlating electrical test results with process and cross‑sectional data.
• Familiarity with failure analysis methodologies and interpretation of FA results.
• Understanding of power‑device packaging, assembly, and reliability considerations.
• Experience with backend processes (e.g., BGBM, STM).
• Proficiency in DoE methodologies and data analysis tools (e.g., JMP, Spotfire).
• Experience with TCAD simulations and layout interpretation.
• Strong cross‑functional communication skills and ability to drive technical solutions.